Read e-book online CdTe and Related Compounds; Physics, Defects, Hetero- and PDF

By Robert Triboulet, Paul Siffert

ISBN-10: 008096513X

ISBN-13: 9780080965130

Virtually thirty years after the outstanding monograph of ok. Zanio and the varied meetings and articles devoted because that point to CdTe and CdZnTe, in spite of everything the numerous progresses in that box and the expanding curiosity in those fabrics for numerous tremendous beautiful business purposes, similar to nuclear detectors and sun cells, the version of a brand new enriched and up to date monograph devoted to those very topical II-VI semiconductor compounds, protecting all their such a lot trendy, smooth and primary facets, appeared very suitable and beneficial. particular insurance of the most subject matters linked to the very topical II-VI semiconductor compound CdTe and its alloy CZTReview of the CdTe contemporary advancements basic history of many subject matters sincerely brought and uncovered

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Read or Download CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications, 1st Edition PDF

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Extra resources for CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications, 1st Edition

Example text

Only after the furnace is rotated into its vertical growth position, the formerly superheated melt contacts the seed and the crystallization can proceed. Only a moderate positive effect of the superheating on the structural crystal quality and the crystallographic orientation of the large-angle grains is so far reported. Playing too with the effect of superheating, Su et al. [124] grew crystals of CdTe from first markedly superheated melts by the unseeded VGF method. The large crystals obtained by this method reached a resistivity of 1 Â 107 O cm at room temperature.

Besides the fact that the higher the thermal conductivity of the container material, the more concave becomes the solid-liquid interface, as reported further in VII, silica, although more favorable that graphite in this sense because of its lower thermal conductivity, has been shown to pose dramatic problems of purity. Contamination from the silica walls is usually observed. The purer the silica used, the less contaminated are the crystals. This justifies both the use of very pure silica tubes and graphite coating.

When the tube is in position 2, the synthesis is almost complete: T2 is then raised up to $970  C (T4) (at temperature a little bit higher than the liquidus associated with 40:60 Cd þ Te mixture according to the phase diagram of CdTe [18]) and T1 is simultaneously raised and adjusted at $550  C (T3). This temperature 32 R. Triboulet leads to a Cd vapor pressure corresponding roughly to the thermodynamic equilibrium for the melting point of 970  C, as it can be determined from the CdTe three-phase line.

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CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications, 1st Edition by Robert Triboulet, Paul Siffert


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