Athanasios Dimoulas, Evgeni Gusev, Paul C. McIntyre, Marc's Advanced Gate Stacks for High-Mobility Semiconductors PDF

By Athanasios Dimoulas, Evgeni Gusev, Paul C. McIntyre, Marc Heyns

ISBN-10: 3540714901

ISBN-13: 9783540714903

This e-book presents a accomplished monograph on gate stacks in semiconductor know-how. It covers the main most modern advancements and fundamentals and may be beneficial as a reference paintings for researchers, engineers and graduate scholars alike. The reader gets a transparent view of what has been performed to this point, what's the cutting-edge and that are the most demanding situations forward prior to we come any in the direction of a attainable Ge and III-V MOS expertise.

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Solomon, M. Yang and K. Rim, J. Appl. Phys. 94, p. 1079 (2003) 51. L. Shifren, X. Wang, P. Matagne, B. Obradovic, C. Auth, S. Cea, T. Ghani, J. He, T. Hoffman, R. Kotlyar, Z. Ma, K. Mistry, R. Nagisetty, R. Shaheed, M. Stettler, C. D. Giles: Appl. Phys. 85, p. 6188 (2004) 52. J. L. F. Gibbons, IEEE Electron Device Lett. 15, p. 100 (1994) 53. T. Mizuno, S. Takagi, N. Sugiyama, H. Satake, A. Kurobe, and A. Toriumi, IEEE Electron Device Lett. 21, p. 230 (2000) 54. S. Takagi, T. Mizuno, N. Sugiyama, T.

Both desorption features for hydrogen at 530 and 380◦ C decrease after exposing the passivated Si(100) surface to the air for 12 h. 27 shows the quantity of Si–O bonds as evaluated by an attenuated total reflectance Fourier transform infrared (ATR/FT-IR) spectrometry. While the extent of hydrogen termination decreased, the Si–O bonds on the Si(100) surface increased. This means that the Si(100) surface is oxidized as desorption of the surface hydrogen termination occurs. 28 shows a schematic structure of (A) the Si(100) surface terminated by two hydrogens a silicon atom, (B) the Si(100) surface partially terminated by hydrogen after desorption at 380◦ C, and (C) the Si(110) surface terminated by hydrogen.

Takamura, H. Wang, J. Pan, F. Arasnia, E. N. Paton, P. V. Sidorov, E. Adem, A. Lochtefeld, G. T. Currie, R. T. -R. Lin: IEEE Electron Device Lett. 351 (2003) Q. -S. Goo, J. Pan, B. Yu, S. Ahmed, J. Zhang, and M. -R. Lin, Proc. VLSI Symposium, Kyoto, p. R. H. M. P. S. C. Y. K. Lee, A. M. Shen, G. T. Currie, N. Gerrish, R. Hammond, A. Lochtefeld, F. T. Bulsara, Q. R. T. T. K. C. W. Sun and Frank Wen, Proc. VLSI Symposium, Kyoto, p. -H. -P. -J. -H. M. -Y. -L. -K. C. -Y. -G. -C. -J. -C. -C. Lee, and C.

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Advanced Gate Stacks for High-Mobility Semiconductors (Springer Series in Advanced Microelectronics) by Athanasios Dimoulas, Evgeni Gusev, Paul C. McIntyre, Marc Heyns


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